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DG306AE25
DG306AE25
Gate Turn-off Thyristor
Replaces March 1998 version, DS4089 - 3.2 DS4099-4.0 January 2000
APPLICATIONS
s Variable speed A.C. motor drive inverters (VSD-AC) s Uninterruptable Power Supplies s High Voltage Converters s Choppers s Welding s Induction Heating s DC/DC Converters
KEY PARAMETERS 600A ITCM VDRM 2500V 225A IT(AV) dVD/dt 1000V/s 300A/s diT/dt
FEATURES
s Double Side Cooling s High Reliability In Service s High Voltage Capability s Fault Protection Without Fuses s High Surge Current Capability s Turn-off Capability Allows Reduction In Equipment Size And Weight. Low Noise Emission Reduces Acoustic Cladding Necessary For Environmental Requirements
Outline type code: E. See Package Details for further information.
VOLTAGE RATINGS
Type Number Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage VDRM VRRM V V 2500 16 Conditions
DG306AE25
Tvj = 125oC, IDM = 50mA, IRRM = 50mA, VRG = 2V
CURRENT RATINGS
Symbol ITCM IT(AV) IT(RMS) Parameter Conditions Max. 600 225 350 Units A A A
Repetitive peak controllable on-state current VD = 67%VDRM, Tj = 125oC, diGQ/dt =15A/s, Cs = 1.0F Mean on-state current RMS on-state current THS = 80oC. Double side cooled. Half sine 50Hz. THS = 80oC. Double side cooled. Half sine 50Hz.
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DG306AE25
SURGE RATINGS
Symbol ITSM I2t diT/dt Parameter Surge (non-repetitive) on-state current I2t for fusing Critical rate of rise of on-state current Conditions 10ms half sine. Tj = 125oC 10ms half sine. Tj =125oC VD = 2000V, IT = 600A, Tj = 125oC, IFG > 20A, Rise time > 1.0s To 66% VDRM; RGK 1.5, Tj = 125oC dVD/dt Rate of rise of off-state voltage To 66% VDRM; VRG = -2V, Tj = 125oC Peak stray inductance in snubber circuit 1000 200 V/s nH Max. 3.5 61250 300 500 Units kA A2s A/s V/s
LS
GATE RATINGS
Symbol VRGM IFGM PFG(AV) PRGM diGQ/dt tON(min) tOFF(min) Parameter Peak reverse gate voltage Peak forward gate current Average forward gate power Peak reverse gate power Rate of rise of reverse gate current Minimum permissable on time Minimum permissable off time Conditions This value maybe exceeded during turn-off Min. 10 20 40 Max. 16 50 10 6 50 Units V A W kW A/s s s
THERMAL RATINGS
Symbol Parameter Conditions Double side cooled Rth(j-hs) DC thermal resistance - junction to heatsink surface Anode side cooled Cathode side cooled Rth(c-hs) Tvj TOP/Tstg Contact thermal resistance Virtual junction temperature Operating junction/storage temperature range Clamping force Clamping force 6.0kN With mounting compound per contact Min. -40 5.0 Max. 0.075 0.12 0.20 0.018 125 125 6.0 Units
o
C/W C/W C/W C/W
o
o
o
o
C C
o
kN
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DG306AE25
CHARACTERISTICS
Tj = 125oC unless stated otherwise Symbol VTM IDM IRRM VGT IGT IRGM EON td tr EOFF tgs tgf tgq QGQ QGQT IGQM On-state voltage Peak off-state current Peak reverse current Gate trigger voltage Gate trigger current Reverse gate cathode current Turn-on energy Delay time Rise time Turn-off energy Storage time Fall time Gate controlled turn-off time Turn-off gate charge Total turn-off gate charge Peak reverse gate current IT =600A, VDM = 2000V Snubber Cap Cs = 1.0F, diGQ/dt = 15A/s Parameter Conditions At 600A peak, IG(ON) = 2A d.c. VDRM = 2500V, VRG = 0V At VRRM VD = 24V, IT = 100A, Tj = 25oC VD = 24V, IT = 100A, Tj = 25oC VRGM = 16V, No gate/cathode resistor VD = 2000V IT = 600A, dIT/dt = 300A/s IFG = 20A, rise time < 1.0s Min. Max. 2.75 50 50 0.9 1.0 50 515 1.5 3.0 1000 11.4 1.5 12.9 1300 2600 190 Units V mA mA V A mA mJ s s mJ s s s C C A
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DG306AE25
CURVES
2.0 2.0
Gate trigger voltage VGT - (V)
1.5
1.5
1.0
1.0
Gate trigger current IGT - (A)
0.5
VGT IGT
0.5
0 -50
0 -25 75 0 25 50 100 Junction temperature Tj - (C) 125
Fig.1 Gate trigger voltage/curremt vs junction temperature
2000
Instantaneous on-state current - (A)
Measured under pulse conditions IG(ON) = 2A Half sine wave 10ms Tj = 25C Tj = 125C
1500
1000
500
0 0 1.0 2.0 3.0 4.0 Instantaneous on-state voltage - (V)
Fig.2 Maximum limit on-state characteristics
5.0
6.0
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DG306AE25
1000
Maximum permissible turn-off current ITCM - (A)
750
Conditions: Tj = 125C, VDM = 1500V dIGQ/dt = 15A/s
500
250
0
0.5 1.0 1.5 Snubber capacitance Cs - (F)
Fig.3 Dependence of ITCM on Cs
2.0
Thermal impedance - C/W
0.075
dc
0.050
0.025
0 0.001
0.01
0.1 Time - s
1.0
10
Fig.4 Maximum (limit) transient thermal impedance - double side cooled
12.5
Peak half sine wave on-state current - (kA)
10.0
7.5
5.0
2.5
0 0.0001
0.001
0.01 Pulse duration - (s)
0.1
1.0
Fig.5 Surge (non-repetitive) on-state current vs time 5/19
DG306AE25
800
Mean on-state power dissipation - (W)
700 600 500 400 300 200 100 0 0
Conditions; IG(ON) = 2A 180 120 60 30
dc
100 200 300 Mean on-state current - (A)
350
65 70
80 90 100 110 120 Maximum permissible case temperature - (C)
130
Fig.6 Steady state rectangular wave conduction loss - double side cooled
Mean on-state power dissipation- (W)
600 500 400 300 200 100 0 0 Conditions; IG(ON) = 2A 60 30 120 90
180
100 200 300 Mean on-state current - (A)
80
90 100 110 120 130 Maximum permissible case temperature - (C)
140
Fig.7 Steady state sinusoidal wave conduction loss - double side cooled
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DG306AE25
400
Turn-on energy loss EON - (mJ)
Conditions: T = 25C 350 j IFGM = 20A Cs = 1.0F 300 Rs = 10 Ohms dI/dt = 300A/s 250 dIFG/dt = 20A/s
200 150 100 50 0 0 100 200 300 400 On-state current - (A)
VD = 2000V
VD = 1500V
VD = 1000V
500
600
Fig.8 Turn-on energy vs on-state current
500 450
Turn-on energy loss EON - (mJ)
400 350 VD = 2000V 300 250 200 150 100 0 VD = 1500V VD = 1000V Conditions: IT = 600A, Tj = 25C, Cs = 1.0F, Rs = 10 Ohms, dIT/dt = 300A/s, dIFG/dt = 20A/s 10 20 30 40 50 60 70 Peak forward gate current IFGM- (A)
Fig.9 Turn-on energy vs peak forward gate current
80
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DG306AE25
600 Turn-on energy loss EON - (mJ)
Conditions: T = 125C 500 I j FGM = 20A Cs = 1.0F 400 Rs = 10 Ohms dIT/dt = 300A/s 300 200 100 0 0 100 200 300 400 On-state current - (A) 500 600
VD = 2000V VD = 1500V VD = 1000V
Fig.10 Turn-on energy vs on-state current
700 650 600
Turn-on energy loss EON - (mJ)
550
Conditions: IT = 600A Tj = 125C Cs = 1.0F Rs = 10 Ohms dIT/dt = 300A/s dIFG/dt = 20A/s
Turn-on energy loss EON - (mJ)
Conditions: I = 600A 500 T Tj = 125C Cs = 1.0F 450 Rs = 10 Ohms IFGM = 20A 400 350
VD = 2000V
550 500 450 400 350 300 250 200 0
VD = 1500V
300 250
VD = 2000V
VD = 1000V
200 150
VD = 1500V
VD = 1000V
100 50
10 20 30 40 50 60 70 Peak forward gate current IFGM- (A)
80
0 50 100 150 200 250 300 Rate of rise of on-state current dIT/dt - (A/s)
Fig.12 Turn-on energy vs rate of rise of on-state current
Fig.11 Turn-on energy vs peak forward gate current
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DG306AE25
Turn-on delay time and rise time - (s)
3.0 2.5 2.0 1.5 1.0 0.5 0 0 100 200 300 400 On-state current - (A) 500
tr
td
Conditions: Tj = 125C, IFGM = 20A Cs = 1.0F, Rs = 10 Ohms, dIT/dt = 300A/s, VD = 1500V 600
Fig.13 Delay & rise time vs turn-on current
5.0
Turn-on delay time and rise time - (s)
4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0
Conditions: IT = 600A Tj = 125C Cs = 1.0F Rs = 10 Ohms dIT/dt = 300A/s dIFG/dt = 20A/s VD = 1500V
tr
td
10 20 30 40 50 60 70 Peak forward gate current IFGM- (A)
80
Fig.14 Delay time & rise time vs peak forward gate current
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DG306AE25
550
Conditions: Tj = 25C 500 Cs = 1.0F dIGQ/dt = 15A/s 450
Turn-off energy loss EOFF - (mJ)
VDM = 2000V
VDM = 1500V
400 VDM = 1000V 350 300 250 200 150 100 50
0
100
200
300 400 On-state current - (A)
500
600
Fig.15 Turn-off energy loss vs on-state current
575 550 VDM = 2000V
Turn-off energy per pulse EOFF - (mJ)
525 500 475 450 425 400 VDM = 1000V 375 350 10 15 20 25 30 35 40 45 50 Rate of rise of reverse gate current dIGQ/dt- (A/s)
Fig.16 Turn-off energy vs rate of rise of reverse gate current
VDM = 1500V Conditions: IT = 600A Tj = 25C Cs = 1.0F
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DG306AE25
1000
Turn-off energy loss EOFF - (mJ)
Conditions: Tj = 125C 900 Cs = 1.0F dIGQ/dt = 15A/s 800 700 600 500 400 300 200 100 0 100 200 300 400 On-state current - (A) 500
VDM = 2000V
VDM = 1500V
VDM = 1000V
600
Fig.17 Turn-off energy vs on-state current
1100 VDM = 2000V
Turn-off energy per pulse EOFF - (mJ)
1000
900 VDM = 1500V
800
700 Conditions: IT = 600A Tj = 125C Cs = 1.0F
VDM = 1000V
600 10 15 20 25 30 35 40 45 50 Rate of rise of reverse gate current dIGQ/dt- (A/s)
Fig.18 Turn-off energy loss vs rate of rise of reverse gate current 11/19
DG306AE25
900 Cs = 1.0F Conditions: T = 125C 700 Vj = 1500V DM dIGQ/dt = 15A/s 600 500 400 300 200 100 0 0 100 200 300 500 400 On-state current - (A) 600 700 800 800 Cs = 1.5F
Turn-off energy per pulse EOFF - (mJ)
Cs = 2.0F
Fig.19 Turn-off energy vs on-state current
12.0
Conditions: Cs = 1.0F 11.0 dI /dt = 15A/s GQ
Tj = 125C
Gate storage time tgs - (s)
10.0 Tj = 25C 9.0 8.0 7.0 6.0 5.0 4.0 0 100 200 300 400 On-state current - (A) 500 600
Fig.20 Gate storage time vs on-state current
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DG306AE25
17.5 Tj = 125C 15.0
Gate storage time tgs - (s)
Conditions: IT = 600A Cs = 1.0F
12.5
10.0
Tj = 25C 7.5
5.0 10 15 20 25 30 35 40 45 50 Rate of rise of reverse gate current dIGQ/dt - (A/s)
Fig.21 Gate storage time vs rate of rise of reverse gate current
2.0 Conditions: Cs = 1.0F dIGQ/dt = 15A/s 1.5
Gate fall time tgf - (s)
Tj = 125C
1.0
Tj = 25C
0.5
0.0 0 100 200 300 400 On-state current - (A) 500 600
Fig.22 Gate fall time vs on-state current
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DG306AE25
2.0 Conditions: IT = 600A Cs = 1.0F 1.5
Gate fall time tgf - (s)
Tj = 125C
1.0 Tj = 25C
0.5
0.5 10 15 20 25 30 35 40 45 50 Rate of rise of reverse gate current dIGQ/dt - (A/s)
Fig.23 Gate fall time vs rate of rise of revese gate current
200 Conditions: Cs = 1.0F 175 dIGQ/dt = 15A/s 150 125 100 75 50 25 0 0 100 200 300 400 On-state current - (A) 500 600 Tj = 125C Tj = 25C
Peak reverse gate current IGQM - (A)
Fig.24 Peak reverse gate current vs on-state voltage
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DG306AE25
300 Conditions: IT = 600A Cs = 1.0F
Peak reverse gate current IGQM - (A)
Tj = 125C
250 Tj = 25C 200
150
100 10 15 20 25 30 35 40 45 50 Rate of rise of reverse gate current dIGQ/dt - (A/s)
Fig.25 Reverse gate current vs rate of rise of reverse gate current
1375 Conditions: = 1500V V 1250 DM dIGQ/dt = 15A/s 1125 Tj = 125C
Turn-off gate charge QGQ - (C)
1000 875 750 625 500 375 250 125 0 100 200 300 400 On-state current - (A) 500 600 Tj = 25C
Fig.26 Turn-off gatecharge vs on-state voltage
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DG306AE25
1600 Tj = 125C
Turn-off gate charge QGQ - (C)
Conditions: IT = 600A Cs = 1.0F
1400 Tj = 25C 1200
1000
800 0 5 10 15 20 25 30 35 40 Rate of rise of reverse gate current dIGQ/dt - (A/s)
Fig.27 Turn-off gate charge vs rate of rise or reverse gate current
3000 VD =1500V
Rate of rise of off-state voltage dV/dt - (V/s)
1000
100
50
10
1 Gate cathode resistance RGK - (Ohms)
10
Fig.28 Typical rate of rise of off-state voltage vs gate cathode resistance 16/19
DG306AE25
Anode voltage and current
0.9VD
0.9IT
dVD/dt VD IT VD VDM
0.1VD td tgt tr
VDP tgs tgf
ITAIL
dIFG/dt
tgq IFG VFG IG(ON)
Gate voltage and current
0.1IFG
0.1IGQ tw1 QGQ 0.5IGQM IGQM Recommended gate conditions: ITCM = 600A IFG = 20A IG(ON) = 2A d.c. tw1(min) = 10s IGQM = 190A diGQ/dt = 15A/s QGQ = 1300C VRG(min) = 2.0V VRG(max) = 16V V(RG)BR
VRG
These are recommended Dynex Semiconductor conditions. Other conditions are permitted according to users gate drive specifications.
Fig.29 General switching waveforms
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DG306AE25 PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE.
2 holes O3.6 0.1 x 2.0 0.1 deep (One in each electrode)
Cathode tab Cathode O42max O25nom. Gate
15 14
30 15
O25nom.
Anode
Nominal weight: 82g Clamping force: 6kN 10%
Package outine type code: E
ASSOCIATED PUBLICATIONS
Title Calculating the junction temperature or power semiconductors GTO gate drive units Recommendations for clamping power semiconductors Use of V , r on-state characteristic
TO T
Application Note Number AN4506 AN4571 AN4839 AN5001 AN5177
Impoved gate drive for GTO series connections
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DG306AE25
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution (PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of preloaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of `T' 22mm Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839
HEATSINKS
Power Assembly has it's own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the factory.
http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. Unit 7 - 58 Antares Drive, Nepean, Ontario, Canada K2E 7W6. Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50 North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444 UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50 Germany Tel: 07351 827723 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. (c) Dynex Semiconductor 2000 Publication No. DSxxxx-y Issue No. x.x January 2000 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
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